sfh 9201 reflexlichtschranke im smt-geh?use reflective interrupter in smt package 2000-01-01 1 opto semiconductors wesentliche merkmale ? optimaler arbeitsabstand 1 mm bis 5 mm ? ir-gaas-lumineszenzdiode: sender ? si-npn-fototransistor: empf?nger ? tageslichtsperrfilter ? hoher kollektor-emitter-strom typ. 0.7 ma ? geringe s?ttigungsspannung ? sender und empf?nger galvanisch getrennt anwendungen ? positionsmelder ? endabschalter ? drehzahlberwachung, -regelung ? bewegungssensor typ type bestellnummer ordering code i ce i f = 10 ma, v ce = 5 v, d = 1 mm ma sfh 9201 q62702-p5038 0.25 2.00 sfh 9201-1/2 q62702-p5055 0.25 0.80 sfh 9201-2/3 q62702-p5056 0.40 1.25 sfh 9201-3/4 q62702-p5057 0.63 2.00 features ? optimal operating distance 1 mm to 5 mm ? ir-gaas-emitter ? silicon npn phototransistor detector ? daylight filter against undesired light effects ? high collector-emitter current typ. 0.7 ma ? low saturation voltage ? emitter and detector electrically isolated applications ? position reporting ? end position switch ? speed monitoring and regulating ? motion transmitter
2000-01-01 2 opto semiconductors sfh 9201 grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit sender (gaas-diode) emitter (gaas diode) sperrspannung reverse voltage v r 5v vorw?rtsgleichstrom forward current i f 50 ma verlustleistung power dissipation p tot 80 mw empf?nger (si-fototransistor) detector (silicon phototransistor) dauer-kollektor-emitter-sperrspannung continuous collector-emitter voltage v ce 16 v kollektor-emitter-sperrspannung, ( t 2 min) collector-emitter voltage, ( t 2 min) v ce 30 emitter-kollektor-sperrspannung emitter-collector voltage v ec 7 kollektorstrom collector current i c 10 ma verlustleistung total power dissipation p tot 100 mw reflexlichtschranke light reflection switch lagertemperatur storage temperature range t stg C 40 + 85 c umgebungstemperatur ambient temperature range t a C 40 + 85 elektrostatische entladung electrostatic discharge esd 2 kv umweltbedingungen / environment conditions 3 k3 acc. to en 60721-3-3 (iec 721-3-3)
sfh 9201 2000-01-01 3 opto semiconductors kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit sender (ir-gaas-diode) emitter (ir-gaas diode) durchla b spannung forward voltage i f = 50 ma v f 1.25 ( 1.65) v sperrstrom reverse current v r = 5 v i r 0.01 ( 1) m a kapazit?t capacitance v r = 0 v, f = 1 mhz c o 25 pf w?rmewiderstand 1) thermal resistance 1) r thja 400 k/w empf?nger (si-fototransistor) detector (silicon phototransistor) kapazit?t capacitance v ce = 5 v, f = 1 mhz c ce 10 pf kollektor-emitter-reststrom collector-emitter leakage current v ce = 20 v i ceo 3 ( 200) na fotostrom (fremdlichtempfindlichkeit) photocurrent (outside light density) v ce = 5 v, e v = 1000 lx i p 3.5 ma w?rmewiderstand 1) thermal resistance 1) r thja 400 k/w
2000-01-01 4 opto semiconductors sfh 9201 reflexlichtschranke light reflection switch kollektor-emitterstrom collector-emitter current kodak neutral white test card, 90% reflexion i f = 10 ma; v ce = 5 v; d = 1 mm i ce min. i ce typ. 0.25 0.70 ma ma kollektor-emitter-s?ttigungsspannung collector-emitter-saturation voltage kodak neutral white test card, 90% reflexion i f = 10 ma; d = 1 mm; i c = 85 m a v ce sat 0.15 ( 0.6) v 1) montage auf pc-board mit > 5 mm 2 padgr? b e 1) mounting on pcb with > 5 mm 2 pad size kennwerte ( t a = 25 c) characteristics (contd) bezeichnung parameter symbol symbol wert value einheit unit ohm02257 d reflector with 90% reflexion (kodak neutral white test card)
sfh 9201 2000-01-01 5 opto semiconductors schaltzeiten ( t a =25 c, v cc =5v, i c =1ma 1) , r l =1k w) switching times bezeichnung parameter symbol symbol wert value einheit unit einschaltzeit turn-on time t ein t on 65 m s anstiegzeit rise time t r 50 m s ausschaltzeit turn-off time t aus t off 55 m s abfallzeit fall time t f 50 m s 1) i c eingestellt ber den durchla b strom der sendediode, den reflexionsgrad und den abstand des reflektors vom bauteil ( d ) 1) i c as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component ( d ) ohm02258 i f v cc r l i c output
sfh 9201 2000-01-01 6 opto semiconductors collector current max. permissible forward current i f = f ( t a ) forward voltage (typ.) of the diode v f = f ( t ) i c i cmax ---------- fd () = 0 oho02255 i c d 0 max c i 20 40 60 80 % 100 1234mm 5 kodak neutral white test card mirror 0 oho02259 i f a t 0 20 40 60 80 100 c 20 40 60 80 100 120 ma 1 oho02256 t -40 f v -20 0 20 40 60 100 1.05 1.10 1.15 1.20 1.25 1.30 v 5 ma 10 ma i f = 20 ma c permissible power dissipation for diode and transistor p tot = f ( t a ) transistor capacitance (typ.) c ce = f ( v ce ), t a = 25 c, f = 1 mhz relative spectral emission of emitter (gaas) i rel = f ( l ) and detector (si) s rel = f ( l ) 0 oho02260 p tot a t 0 20 40 60 80 100 c 40 80 120 mw 160 total power dissipation detector emitter oho00374 10 c ce -2 pf v ce 50 -1 10 0 10 1 10 2 10 v 40 35 30 25 20 15 10 5 0 0 oho00786 s rel l 700 rel i 20 40 60 80 % 100 800 900 1000 nm 1100 detector emitter switching characteristics t = f ( r l ) t a = 25 c, i f = 10 ma collector current i c = f ( i f ), spacing d to reflector = 1 mm, 90% reflection output characteristics (typ.) i c = f ( v ce ), spacing to reflector: d = 1 mm, 90% reflection, t a =25 c oho00785 t l r 10 1 10 -1 10 2 10 3 s 10 0 10 1 k w m i c 100 m a t on = = 1 ma c i t off t on t off oho00783 0 c i ma 0 ma f i 0.5 1.0 1.5 2.0 2.5 3.0 4 8 12 16 20 =5 v ce v v oho00781 ce 0.1 0 i c i f = 25 ma = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma i f 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ma 2.0 10 v 0 10 1
sfh 9201 2000-01-01 7 opto semiconductors ma?zeichnung package outlines ma?e in mm, wenn nicht anders angegeben / dimensions in mm, unless otherwise specified. 3.4 3.0 5.8 6.2 0.15 0.13 0...0.1 1.27 spacing 2.1 1.7 4 6 1 3 geo06840 4.2 3.8 0.3 0.5 25 type 1 2 3 4 5 6 sfh 9201 anode C emitter collector C cathode
2000-01-01 8 opto semiconductors sfh 9201 bitte verarbeitungshinweise fr smt-bauelemente beachten! please observe the handling guidelines for smt devices! l?thinweise soldering conditions bauform type drypack level acc. to ips-stand. 020 tauch-, schwalll?tung dip, wave soldering reflowl?tung reflow soldering kolbenl?tung iron soldering peak temp. (solderbath) max. time in peak zone peak temp. (package temp.) max. time in peak zone (iron temp.) sfh 9201 4 n. a. C 245 c 10 sec. n.a.
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